Customized micro-nano optics
The customized micro-nano optics(CMN) center at SVG Optronics offers a full service from design and manufacturing up to the characterization of micro-nano optical elements for EUV to FIR applications and their processing and assembly in whole systems.
The CMN center either proceeds according to your design guidelines or creates a design for manufacturing your application.
CMN center has cooperated with the key-lab of Soochow University for the fabrication of large aperture pulse compressed gratings,with NILT in Denmark for e-beam lithography of nano-structures.
Technology
Resist technology
Lithographic structuring on the electron beam writer
Reactive ion beam etching of metals and inorganic materials
R2R embossing for micro-nano structure films
deep groove embossing for micro-nano structures
Technological environment
UV – Replication
R2R film embossing
Ultra diamond precision machining
Wafer scale integration
Micro assembly
Coating technology
Characterization
Wave front detection
Microscopy (UV, SEM, AFM)
Tactile measurement
White-light interferometer
Optical characterization
Selected applications
Outcoupling films
Beam splitter, beam shaper
photonic crystals
Pulse compression gratings
Polarizers
Brightness enhancement
Substrates & materials Standard substrates 4“, 6“, 8“ and 12“
Fused silica and silicon (Special substrates ans materials on request)
Critical dimension 65 nm
writing grid 1 nm
CD tolerance ± 10 nm
Overlay ± 30 nm
Etching aspect ratio ≤ 1 : 10
Etching depth tolerance ± 10 nm
Typical applications
Diffractive and refractive lenses and lens arrays
Aspherical correction of spherical surfaces
Beam shaper
Regular and chirped lens arrays
gratings with high efficiency
CGHs
Example of Application:Patterned microlens array for efficiency improvement of small-pixelated organic light-emitting devices leads to more than 20% efficiency increasing:
Technical data
Substrates & materials
Standard substrates 4“, 6“, 8“ and 12“
Fused silica and silicon (Special substrates ans materials on request)
Critical dimension
65 nm
writing grid
1 nm
CD tolerance
± 10 nm
Overlay
± 30 nm
Etching aspect ratio
≤ 1 : 10
Etching depth tolerance
± 10 nm
High precision microstructures on various substrates
Processing of planar, spherical and aspherical substrates with sag heights of up to 30 mm
Generation of resist structures for replication or proportional transfer by ion-beam etching or for the nickel preparation with electric-forming facilities.
Continuous surface or step level profiles
Technical data
basic system
4A-LDW100, see the system
laser
Blue laser, λ = 405 nm
max. writing field
100 mm x 100 mm
min. spot size
~0.2µm
auto-focus system
0.3µm optical
writing mode
variable dose, max. 64 level
spot positioning
movement of substrate stage and grayscale
substrate table
x-y motion and cardanic mount (tilt in 2 orthogonal axis), polar coordinates
min. radius of substrate curvature
∼10 mm
max. surface tilt angle
10°
max. radius of substrate curvature
Tel: +86-512-62588937, +86-512-62589157
Fax: +86-512-62520928, +86-512-62600602
email: info@svgoptronics.com
SVG Optronics,Co., Ltd.
478 Zhongnan Street, Suzhou Industrial Park(SIP)
Suzhou 215026, P.R. China
∼30 mm
writing speed
2-10 cm²/h (at highest resolution, depending on structure)
position accuracy ≤ 50 nm (planar substrates)
≤ 150 nm (curved substrates)